Technology, Process and Cost

SK Hynix 176-layer 3D NAND

By Yole SystemPlus

SK hynix’s next-generation triple-level cell NAND memory using periphery under-cell design and charge trap flash.

Key Features

  • Detailed photos
  • Precise measurements
  • Cross-section SEM images
  • Materials analysis
  • Manufacturing process flow
  • Supply chain evaluation
  • Manufacturing cost analysis
  • Comparison with 128-layer NAND

What's new

  • Added / increased wordline layers from 128 layers to 176 layers
  • Reduced wordline pitch
  • Higher density
  • Increased wafer productivity in terms of memory (GB/wafer)
  • New / smaller CMOS process technology
  • Flash memory added on die

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