Technology, Process and Cost
Toshiba 3rd Generation SiC MOSFET
By Yole SystemPlus —
Discover the most advanced generation of Toshiba’s SiC MOSFET featuring a new cell structure and improved performances.
- Detailed photos
- Precise measurements
- Materials analysis
- Manufacturing process flow
- Supply chain evaluation
- Manufacturing cost analysis
- Physical and cost comparisons of Toshiba’s 1200V devices: Gen2 vs Gen3
- Latest generation of SiC MOSFET from Toshiba
- New doping and MOSFET cell structure for Toshiba
- Showa Denko
Overview / Introduction
- Executive Summary
- Reverse Costing Methodology
- Package Analysis
- Package View & Opening
- Package Cross-Section
- SiC MOSFET Die Analysis
- Die Views & Dimensions
- Die Delayering
- Die Cross Section
- Toshiba 1200V devices: Gen2 vs Gen3 Comparison
Manufacturing Process Flow
- SiC Wafer Fab Unit
- SiC Wafer Process Flow
- Assembly Unit
- Assembly Process Flow
- Main Steps of the Economic Analysis
- Yields Explanation and Hypotheses
- SiC MOSFET Wafer & Die Cost
- Packaging Cost
- Component Cost
- Example of Gen 2 vs Gen 3 1200V devices cost comparison
About Yole Group
The market outlook for SiC devices is promising. According to Yole Intelligence’s Compound Semiconductor Monitor (Q2-2022), it is expected to grow from $1B to $6B for the period 2021-2027.
SiC device technology is still varied. Every manufacturer has its own solutions for die design and packaging integration. This leads to strong competition, which will accelerate technical innovation and lower prices.
Moreover, SiC business models are still very different. We are seeing, and will continue to see, restructuring of the supply chain, driven by the main cost factors.
Since the commercialization of the first SiC device in 2001, performance and the value that these devices add has gradually been proven. Device price has also become increasingly acceptable to end-users.
In 2022, Toshiba introduced the 3rd generation of its SiC MOSFETs. For this generation, Toshiba modified the doping and the MOSFET cell structure compared to the previous generation.
In this context, Yole SystemPlus provides a full reverse costing study of the Gen3 SiC MOSFET from Toshiba: TW060N120C.
It is a discrete-packaged SiC power MOSFET of 1200V breakdown voltage and 60 mOhm typical on-resistance.
Supported by a full teardown of the component, this report reveals Toshiba’s technology choices for its Gen3 SiC die, as well as the assembly of the die in the discrete package.
This report also provides insights into technology data, manufacturing cost, and selling price of the component, as well as an estimated manufacturing cost of all the component’s parts.
Included too is a physical comparison between 1200V Gen2 and Gen3 dies, as well as wafer and die costs comparisons.
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