Technology, Process and Cost Comparison

GaN Power Transistor Comparison 2023

By Yole SystemPlus

Technology and cost comparison of 43 GaN HEMTs Transistors from worldwide players, covering the low and medium voltage range and dept analysis of 10 among them


Key Features​

  • Detailed photos
  • Precise measurements
  • Materials analysis
  • Manufacturing process flow 
  • Supply chain evaluation
  • Manufacturing cost analysis
  • Estimated selling price
  • Exhaustive physical, technology, and manufacturing cost comparisons

What’s new? ​

  • Compared to the 2022 report, there are 10 new GaN HEMTs from 8 GaN market players: STMicroelectronics, Texas Instruments, Transphorm, GaN Systems, Navitas, Nexperia, Cambridge GaN Devices, ROHM.
  • Complete mapping of a total of 43 GaN HEMTs Transistors from worldwide players and a complete range of voltage classes.

Product's objectives

  • Provide a technology overview of GaN HEMTs from main market players: exhaustive roadmap of 43 GaN HEMTs from 14 worldwide GaN market players covering both the low voltage and medium voltage (600-1200V) range.
  • Provide optical and scanning electron microscope (SEM) pictures from the device’s opened package, down to the microscopic level of transistor design and GaN epitaxy structure.
  • Provide exhaustive physical, technology, and manufacturing cost comparisons of the analyzed devices.
  • Physical analysis is only shown for the 10 newly added GaN HEMTs (for devices previously analyzed by Yole SystemPlus, please refer to the related reports previously published by Yole SystemPlus). Moreover, the physical and technological parameters of all 43 GaN Power Transistors are detailed in an Excel file.

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