Technology, Process and Cost
SiC Transistor Comparison 2023
By Yole SystemPlus —
Technology and cost comparison of 12 SiC MOSFETs amongst a roadmap of 49 SiC Transistors from worldwide players, covering all the main voltage ranges.
SPR23703
Overview / Introduction
- Executive summary
- Reverse costing methodology
- Glossary
Technology & Market
Company Profile
- STMicroelectronics
- ROHM
- Microchip
- Toshiba
- SemiQ
- General Electric
- DENSO
- Panasonic
- SMC Diode Solutions
- Anbonsemi
- InventChip
Physical Analysis
- 650V: STMicroelectronics, DENSO
- 750V: ROHM
- 1200V: Toshiba, SemiQ, SMC Diode Solutions, Anbonsemi, InventChip, Panasonic, General Electric
- 1700V: Microchip
- 3300V: Microchip
Technology and Physical Comparison
- Generation evolution and parameters trends (epitaxy, pitch…)
- Device performance comparisons (Rdson*Qg, Rdson*Area, current density)
- Device design comparisons
Manufacturing Process Flow
- Supply chain of all analyzed players
- Wafer fabrication unit hypotheses for all analyzed players
- Manufacturing process flow schematics of 3 selected SiC process
Cost and Price Analysis
- Yields explanation & hypotheses
- For each of the 12 newly-added SiC MOSFETs:
- Epi-wafer and FE wafer cost breakdown
- Die cost breakdown
- Packaging cost breakdown
- Component cost breakdown
- Component price estimation
Cost Comparison
- Comparisons include wafer, die costs, and die Ampere costs
Feedbacks
Related Products
Yole SystemPlus Services
Exhaustive Comparison Of Worldwide Players
The SiC device market will be above $8B in 2028, according to Yole Intelligence’s Power SiC / GaN Compound Semiconductor Market Monitor.
The SiC ecosystem has been reshaped by the major SiC market players in recent years. Every manufacturer has its own solutions for die design and packaging integration. This leads to strong competition, which will accelerate technical innovation and lower prices. Although some SiC business models are different, some trends are emerging such as vertical integration in order to maximize revenues in the near future. This restructuring we are seeing of the supply chain is driven by the main cost factors. Since the commercialization of the first SiC device in 2001, the performance and value that these devices add has steadily been proven. Device price has also become increasingly acceptable to end-users.
In this report, Yole SystemPlus presents an overview of the state-of-the-art of SiC MOSFETs, with a detailed analysis of 12 newly-added SiC MOSFETs compared to the last report version in 2021. These 12 devices are from 11 worldwide players (including, for the first time, some Chinese players): STMicroelectronics, ROHM, Microchip, Toshiba, SemiQ, General Electric, DENSO, Panasonic, SMC Diode Solutions, Anbonsemi, and InventChip.
The 12 devices are included in Yole SystemPlus’ exhaustive roadmap of 49 SiC transistors from 17 worldwide SiC market players, and the main physical and electrical parameters are detailed in the Excel file. We cover all the main available voltage classes: 650/750V, 900V/1000V, 1200V, 1700V, and 3300V.
This report provides optical and scanning electron microscope (SEM) pictures from the device’s opened package, down to the microscopic level of the MOSFET design – with a focus on the latter. This physical analysis is shown for the 12 newly-added MOSFETs – for devices previously analyzed by Yole SystemPlus, please refer to the related reports previously published by Yole SystemPlus. Moreover, the physical and technological parameters of all 49 SiC Transistors are detailed in an Excel file.
Yole SystemPlus has also performed cost simulations for the 12 newly-added MOSFETs, where we break down their estimated manufacturing costs and selling prices. In the case of dies found in power modules, only the SiC transistor chip is analyzed and cost-simulated. For the reverse-costing of the complete power module, please refer to the related Yole SystemPlus report. For discrete packages, the complete component is cost-simulated (including the discrete package).
Lastly, this report provides exhaustive physical, technology, and manufacturing cost comparisons of the analyzed devices.
Key Features
- Detailed photos
- Precise measurements
- Materials analysis
- Manufacturing process flow
- Supply chain evaluation
- Manufacturing cost analysis
- Estimated selling price
- Exhaustive physical, technology, and manufacturing cost comparisons
What's new:
Compared to the 2021 report, there are 12 new devices from 11 worldwide players: STMicroelectronics, ROHM, Microchip, Toshiba, SemiQ, General Electric, DENSO, Panasonic, SMC Diode Solutions, Anbonsemi, InventChip.
Complete mapping of a total of 49 SiC Transistors from worldwide players and a complete range of voltage classes.
Product's ojectives
- Provide a technology overview of worldwide SiC Transistor players: exhaustive roadmap of 49 SiC Transistors from 17 worldwide SiC market players covering all the main available voltage classes: 650/750V,900V/1000V, 1200V, 1700V, and 3300V.
- Provide optical and scanning electron microscope (SEM) pictures from the device’s opened package, down to the microscopic level of MOSFET design – with a focus on the latter.
- Provide exhaustive physical, technology, and manufacturing cost comparisons of the analyzed devices.
- Physical analysis is only shown for the 12 newly added MOSFETs (for devices previously analyzed by Yole SystemPlus, please refer to the related reports previously published by Yole SystemPlus). Moreover, the physical and technological parameters of all 49 SiC Transistors are detailed in an Excel file.