YG PRESS NEWS – 5G Telecom infrastructure pulls the strings of GaN-on-SiC and GaN-on-Si technologies
The installation of 5G base stations has caused RF GaN-on-SiC to gain momentum, while a significant acquisition has taken place in the dynamic GaN-on-Si market.
- The RF GaN market is expected to exceed US$2 billion by 2028.
- The 5G Telecom infrastructure market still dominates and drives the RF GaN market.
- Following the US-China trade tension, Chinese players have made tremendous efforts to develop their supply chain at the substrate, epiwafer, and device levels. In this context, how rapidly will the Chinese ecosystem evolve?
RF GaN has been the go-to choice for 4G base stations for many years, due to of its outstanding performance in the power amplifier stage. Additionally, defense applications consistently drove the demand for RF GaN-on-SiC in military radar and electronic warfare systems. However, the US ban on Huawei, the impact of COVID-19, and the slowdown in base station deployment led to an adjustment period for RF GaN in 2021. As of 2023, various manufacturers are also pushing GaN adoption in their systems for the resurgence in 5G deployment. Furthermore, GaN-on-Si is becoming increasingly mature, as evidenced by partnerships and prototype announcements. These developments will have a direct impact on the industry from 2023 onwards. In this RF GaN Compound Semiconductor monitor, Yole Intelligence, part of Yole Group‘s analysts, track SEDI, Wolfspeed, Qorvo and NXP at device level, Wolfspeed, IQE Coherent and SICC at wafer and epiwafer level… For more information about this analysis, please contact us!
Titre du visueljune 2021
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ECPE 2023 – Yole Group will be part of the ECPE Wide Bandgap User Forum with Poshun CHIU, Technology & Market Senior Analyst, Compound Semiconductor & Emerging Substrates at Yole Intelligence. He will present SiC Materials and Substrates Trends during the session Application Aspects of Recent SiC Devices on Wednesday, March 29 at Erding, Germany.