YG PRESS NEWS – GaN HEMT transistors: tech, cost, and in-depth analysis
Yole SystemPlus analyzes the technical strategies of the leading compound semiconductor companies, with a detailed technology and cost comparison of 43 power GaN devices
- The power GaN device market is expected to be worth US$2.04 billion in 2028.
- The advancement of power GaN devices continues with the launch of new device generations by established players.
- A noticeable trend involves an increased focus on device integration, achieved through the incorporation of additional functionalities onto the GaN HEMTs die.
- Another approach is the introduction of new functional dies, such as diodes and ICs, within the packaged component.
- These design choices significantly impact various aspects, including the device’s physical size (footprint), its functionalities, and the overall cost of the component.
Yole SystemPlus, part of Yole Group, in the GaN Power Transistor Comparison 2023, presents an overview of the current landscape of GaN power devices, conducting a detailed analysis of 10 recently introduced GaN HEMTs in comparison to the previous 2022 report version. These additions include devices from notable companies like Cambridge GaN Device, Navitas, GaN Systems, ROHM, Nexperia, Transphorm, STMicroelectronics, and Texas Instruments.
These 10 devices have now become part of Yole SystemPlus’ comprehensive database, which comprises a total of 43 Power GaN HEMTs from 14 key players in the GaN market. The Excel file accompanying the report furnishes intricate insights into the principal physical and electrical parameters of these devices.
Within this report, optical and scanning electron microscope (SEM) imagery showcasing the device’s unpackaged components is included, delving into the transistor’s design at a microscopic scale. This serves to accentuate the inner workings, design, and active region of the device. Notably, the physical analysis is dedicated to the newly introduced GaN HEMTs. For devices previously subjected to Yole SystemPlus’ analysis, reference is provided to the corresponding previously published reports.
For a comprehensive overview, an Excel file provides a detailed breakdown of the physical and technological attributes of all 43 GaN HEMTs. The report also delves into the estimated manufacturing costs and selling prices of the newly added GaN devices. Moreover, it offers a thorough comparison of physical, technological, and manufacturing costs across the analyzed devices… For more information about this analysis, please contact us!
Titre du visueljune 2021
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