Technology, Process and Cost Comparison
SiC Transistor Comparison 2024
By Yole SystemPlus —
Technology and cost comparison of 6 SiC MOSFETs amongst a roadmap of 55 SiC Transistors from worldwide players, covering all the main SiC voltage ranges.
SPR24807
Overview / Introduction
- Executive summary
- Reverse costing methodology
- Glossary
Technology & Market
Company Profile
- ROHM
- Infineon
- onsemi
- Nexperia
- Bosch
- Goford Semiconductor
Physical Analysis
- 650V:
- Goford Semiconductor GS65R060Q4A
- 1200V:
- ROHM SCT4062KEHR
- Infineon Die in FS02MR12A8MA2B
- Onsemi NVH4L070N120M3S
- Nexperia NSF080120L3A0
- Bosch Die in BM840F12B34U2
Technology and Physical Comparison
- Generation evolution and parameters trends (epitaxy, pitch…)
- Device performance comparisons (Rdson*Qg, Rdson*Area, current density)
- Device design comparisons
Manufacturing Process Flow
- Supply chain of all analyzed players
- Wafer fabrication unit hypotheses for all analyzed players
- Manufacturing process flow schematics of 2 selected SiC process
Cost and Price Analysis
- Yields explanation & hypotheses
- For each of the 6 newly-added SiC MOSFETs:
- Epi-wafer and FE wafer cost breakdown
- Die cost breakdown
- Packaging cost breakdown
- Component cost breakdown
- Component price estimation
- Cost Comparison
- Comparisons include wafer, die costs, and die Ampere costs
Feedbacks
Related Products
Exhaustive Comparison Of SiC Worldwide Players
The Power SiC device market will be above $10B by the end of this decade, according to Yole Group expectations. The SiC ecosystem has been reshaped by leading market players in recent years, fostering intense competition towards technical innovation and cost reduction.
In this report, Yole SystemPlus presents an overview of the state-of-the-art of SiC MOSFETs, with a detailed analysis of 6 newly-added SiC MOSFETs compared to the latest report version of 2023. These 6 devices are from 6 worldwide players: Infineon, ROHM, onsemi, Nexperia, Bosch, Goford Semiconductor. These 6 devices are included to Yole SystemPlus exhaustive roadmap built (since the first comparison report in 2016) of 55 SiC Transistors from 20 worldwide SiC market players for which the main physical and electrical parameters are detailed in the Excel file. We cover all the main available voltage classes: 650/750V,900V/1000V, 1200V, 1700V, and 3300V.
Promising performances of the newest SiC devices technologies as announced by manufacturers datasheet, but what about their performance in real-life case under the same test conditions ? That’s what we are investigating in our new collection of “Performance” reports, check the first Volume of this collection !
Anbonsemi, Bosch, DENSO, General Electric, GeneSiC, Goford Semiconductor, Infineon, InventChip, IXYS (Littelfuse), Littelfuse, Microchip, Nexperia, onsemi, Panasonic, ROHM, SemiQ, SMC Diode Solutions, STMicroelectronics, Toshiba, UnitedSiC (Qorvo), Wolfspeed
Key features
- Detailed photos
- Precise measurements
- Die analysis
- Package analysis
- Manufacturing process flow
- Supply chain evaluation
- Manufacturing cost analysis
- Physical Comparisons
- Technical Comparisons
- Cost Comparisons
What's new?
- Worldwide players
- New players covered : Goford Semiconductor, Nexperia, Bosch
Product objectives
- Provide a technology overview of worldwide SiC Transistor players: exhaustive roadmap of 55 SiC Transistors from 20 worldwide SiC market players covering all the main available voltage classes: 650/750V,900V/1000V, 1200V, 1700V, and 3300V.
- Provide optical and scanning electron microscope (SEM) pictures from the device’s opened package, down to the microscopic level of MOSFET design – with a focus on the latter.
- Provide exhaustive physical, technology, and manufacturing cost comparisons of the analyzed devices.
- Physical and cost analysis is only shown for the 6 newly added MOSFETs (for devices previously analyzed by Yole SystemPlus, please refer to the related reports previously published by Yole SystemPlus). Moreover, the physical and technological parameters of all 55 SiC Transistors are detailed in an Excel file.
- Yole SystemPlus has performed cost simulations only for the 6 newly-added MOSFETs. We break down their estimated manufacturing costs and selling prices. In the case of dies found in power modules, only the SiC Transistor chip is analyzed and cost-simulated. For the reverse-costing of the complete power module please refer to the report Automotive Power Module Packaging Comparison.