Samco unveils plasma enhaced ALD system for GaN and SiC power devices

SAMCO has developed and launched a new Atomic Layer Deposition (ALD) system focusing on gate oxide formation of Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices, which are key for energy-saving devices or “green electronics.”

SAMCO is a global semiconductor equipment company that designs and manufactures dry etching systems, PECVD, and UV-Ozone and Plasma cleaning systems. The company’s success has been driven by delivering innovative processing solutions for wide band-gap semiconductor devices such as RF devices, LEDs, laser diodes and power devices.

SAMCO’s new ALD system, “AL-1”, deposits pinhole-free AlOx and SiO2 films, which are optimal for gate oxide of GaNMOSFET, GaNMOS-HFET and 4H-SiCMOSFET devices. The system features precise film thickness control at the atomic layer level (1.2Å per cycle at a deposition temperature of 350 °C). The high-quality deposited AlOx film (breakdown voltage of 7.5 MV/cm) also provides excellent step coverage (aspect ratio of 32:1, 1.25μm width, and 40 μm depth) with just 103 nm thick oxide films.

The AL-1 is capable of depositing uniform oxides on an 8-inch wafer or three 4-inch wafers and is suitable for R&D and pilot production.

To strengthen turn-key solutions for next-generation power device production, SAMCO signed a distributor agreement with Epiluvac, a Swedish manufacturer of SiC CVD systems, on December 1, 2015. The AL-1 continues SAMCO’s success in providing highly reliable and cost-effective process solutions for the SiC and GaN power device markets.