GaN revolution: from innovation to high-volume manufacturing

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Power & RF GaN markets maintain their growth trajectories to beyond US$2.45 billion and US$1.9 billion, in 2029. This comes with a significant cumulative annual growth rate (CAGR) of 46% and 10%, respectively, in the period 2023-2029.

All segments of the power GaN market will see continued growth, with the consumer segment dominating over the next 5 years. Yole Group anticipates the RF GaN market will gradually gain momentum in 2024, surpassing US$1.9 billion by 2029, driven by applications including telecom infrastructure and satellite communications.

Join us for this in-depth online event to learn about the exciting growth markets of power & RF GaN.

On June 19 at 5.00 PM CET / 8.00 AM PST, industry experts from Lam Research and Yole Group will delve into the key market trends and drivers and present solutions for high-volume manufacturing that are propelling GaN technologies to new heights.

This webinar, featuring experts from Lam Research Corp. and the Yole Group is a must-attend for semiconductor professionals seeking to understand the future of GaN devices, their market drivers, and solutions for high-volume manufacturing.

Dr. David Haynes, Vice President, Specialty Technologies, Lam Research
“Demonstrating Lam’s continuous innovation in the Specialty Technologies sector, we are addressing the challenges of high-volume GaN device fabrication by leveraging our production-proven, solutions. We have focused on GaN-on-Si based HEMT and monolithically integrated IC devices for power management applications. We are already applying the learning to key GaN-on-Si RF applications and to other GaN-based devices such as micro-LEDs. During this online event, presented in collaboration with Yole Group, we will review the capabilities that Lam has developed to support GaN device manufacturing and highlight the major benefits they are delivering to our customers.”

GaN market drivers

Consumer fast chargers and adapters remain the main drivers for power GaN. New trends include higher power and ‘all-GaN’ chargers, leading to more GaN content per charger. Power GaN is also expanding to other consumer applications, such as OVP in smartphones, presenting a billion-unit market opportunity. Besides consumer, Yole Group’s analysts expect two more growth drivers for power GaN: automotive and datacom market segments. Indeed, GaN technology is also poised to enter the automotive market in large volumes, driven by the electric vehicle boom and its associated demand for onboard chargers, as well as DC-DC converters. The telecom and infrastructure sector are expected to be another source of growth over the coming years, as artificial intelligence increases demand for data center capacity. For RF GaN, telecom infrastructure and satellite communications are, without doubt, the main market drivers. And Yole Group underlines significant new opportunities in telecom, for RF GaN-on-Si technology.

GaN revolution – Webcast program

Sponsored by Lam Research, a global supplier of innovative wafer fabrication equipment and services, this program will provide insights on plasma etch, deposition and clean solutions for power and RF GaN, highlighting emerging markets and high-volume manufacturing trends.  Lam’s production-proven solutions are enabling breakthroughs in the performance and reliability of next generation GaN devices.

This online event will be moderated by Claire Troadec, Director of the More than Moore activities at Yole Group.

  • Power to RF industries: GaN’s journey to a $4.35 billion market by 2029

Ezgi Dogmus, Activity Manager, Semiconductor Substrates & Materials at Yole Group

  • Addressing the challenges of high-volume GaN device fabrication

Michelle Bourke, Managing Director, CSBG Strategic Marketing, Lam Research

David Haynes, Vice President, Specialty Technologies, Lam Research

Do not miss the opportunity to hear from experts at the forefront of semiconductor manufacturing technologies. Mark your calendar today and be part of this exciting online event on June 19, that’s sure to spark your interest and broaden your knowledge in what the future holds for GaN devices.

Stay tuned on!

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